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ON Semiconductor HGTG40N60A4

HGTG40N60A4 ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
350nC
Base Part Number:
HGTG40
Detailed Description:
IGBT 600V 75A 625W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
75A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 40A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
400µJ (on), 370µJ (off)
Td (on/off) @ 25°C:
25ns/145ns
Power - Max:
625W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 40A, 2.2Ohm, 15V
Current - Collector Pulsed (Icm):
300A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG40N60A4. Features 350nc gate charge. Base Part Number: hgtg40. It features igbt 600v 75a 625w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 75a. Features 2.7v @ 15v, 40a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 400µj (on), 370µj (off). Td (on/off) value of 25ns/145ns. The maximum power of the product is 625w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 40a, 2.2ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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HGTG40N60A4(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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