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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG30N60C3D. Features 162nc gate charge. Base Part Number: hgtg30n60. It features igbt 600v 63a 208w through hole to-247-3. It has a trr (reverse recovery time) of 60ns. The product is available in through hole configuration. The maximum collector current includes 63a. Features 1.8v @ 15v, 30a. to-247-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 1.05mj (on), 2.5mj (off). The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 208w. It carries standard input type. Moreover, the product comes in to-247-3. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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