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ON Semiconductor HGTG30N60B3D

HGTG30N60B3D ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
170nC
Base Part Number:
HGTG30N60
Detailed Description:
IGBT 600V 60A 208W Through Hole TO-247-3
Reverse Recovery Time (trr):
55ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 30A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
550µJ (on), 680µJ (off)
Td (on/off) @ 25°C:
36ns/137ns
Power - Max:
208W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
480V, 30A, 3Ohm, 15V
Current - Collector Pulsed (Icm):
220A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG30N60B3D. Features 170nc gate charge. Base Part Number: hgtg30n60. It features igbt 600v 60a 208w through hole to-247-3. It has a trr (reverse recovery time) of 55ns. The product is available in through hole configuration. The maximum collector current includes 60a. Features 1.9v @ 15v, 30a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 550µj (on), 680µj (off). Td (on/off) value of 36ns/137ns. The maximum power of the product is 208w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 480v, 30a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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HGTG30N60B3D(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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