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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG30N60B3. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 170nc gate charge. Base Part Number: hgtg30. It features igbt 600v 60a 208w through hole to-247-3. The maximum collector current includes 60a. Features 1.9v @ 15v, 30a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 500µj (on), 680µj (off). Td (on/off) value of 36ns/137ns. The maximum power of the product is 208w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 480v, 30a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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