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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG30N60A4D. Features 225nc gate charge. Base Part Number: hgtg30n60. It features igbt 600v 75a 463w through hole to-247-3. It has a trr (reverse recovery time) of 55ns. The product is available in through hole configuration. The maximum collector current includes 75a. Features 2.6v @ 15v, 30a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 280µj (on), 240µj (off). Td (on/off) value of 25ns/150ns. The maximum power of the product is 463w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 30a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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