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ON Semiconductor HGTG20N60C3D

HGTG20N60C3D ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
91nC
Base Part Number:
HGTG20N60
Detailed Description:
IGBT 600V 45A 164W Through Hole TO-247-3
Reverse Recovery Time (trr):
55ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
45A
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 20A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
500µJ (on), 500µJ (off)
Td (on/off) @ 25°C:
28ns/151ns
Power - Max:
164W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
480V, 20A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
300A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG20N60C3D. Features 91nc gate charge. Base Part Number: hgtg20n60. It features igbt 600v 45a 164w through hole to-247-3. It has a trr (reverse recovery time) of 55ns. The product is available in through hole configuration. The maximum collector current includes 45a. Features 1.8v @ 15v, 20a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 500µj (on), 500µj (off). Td (on/off) value of 28ns/151ns. The maximum power of the product is 164w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 480v, 20a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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HGTG20N60C3D(Datasheets)
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Plating Material 20/Dec/2007(PCN Design/Specification)

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