ON Semiconductor HGTG20N60B3

HGTG20N60B3 ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
80nC
Base Part Number:
HGTG20N60
Detailed Description:
IGBT 600V 40A 165W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
40A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 20A
Supplier Device Package:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
475µJ (on), 1.05mJ (off)
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
165W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Test Condition:
480V, 20A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
160A
Manufacturer:
ON Semiconductor
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is HGTG20N60B3. Features 80nc gate charge. Base Part Number: hgtg20n60. It features igbt 600v 40a 165w through hole to-247-3. The product is available in through hole configuration. The maximum collector current includes 40a. Features 2v @ 15v, 20a. to-247-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 475µj (on), 1.05mj (off). The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 165w. It carries standard input type. Moreover, the product comes in to-247-3. Test condition included 480v, 20a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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HGTG20N60B3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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