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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG12N60B3. Features 51nc gate charge. Base Part Number: hgtg12n60. It features igbt 600v 27a 104w through hole to-247-3. The product is available in through hole configuration. The maximum collector current includes 27a. Features 2.1v @ 15v, 12a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 150µj (on), 250µj (off). Td (on/off) value of 26ns/150ns. The maximum power of the product is 104w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 480v, 12a, 25ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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