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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG10N120BND. The maximum collector current includes 35a. It features igbt npt 1200v 35a 298w through hole to-247. Features 2.7v @ 15v, 10a. Td (on/off) value of 23ns/165ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 100nc gate charge. Base Part Number: hgtg10n120. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 70ns. Provide switching energy up to 850µj (on), 800µj (off). Test condition included 960v, 10a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 298w.
For more information please check the datasheets.
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