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ON Semiconductor HGTD3N60C3S9A

HGTD3N60C3S9A ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
10.8nC
Base Part Number:
HGTD3N60
Detailed Description:
IGBT 600V 6A 33W Surface Mount TO-252AA
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
6A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 3A
Supplier Device Package:
TO-252AA
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tape & Reel (TR)
Switching Energy:
85µJ (on), 245µJ (off)
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
33W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Condition:
480V, 3A, 82Ohm, 15V
Current - Collector Pulsed (Icm):
24A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTD3N60C3S9A. Features 10.8nc gate charge. Base Part Number: hgtd3n60. It features igbt 600v 6a 33w surface mount to-252aa. The product is available in surface mount configuration. The maximum collector current includes 6a. Features 2v @ 15v, 3a. to-252aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tape & reel (tr) is the available packaging type of the product. Provide switching energy up to 85µj (on), 245µj (off). The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 33w. It carries standard input type. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Test condition included 480v, 3a, 82ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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HGTD3N60C3S, HGTP3N60C3(Datasheets)

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