ON Semiconductor HGT1S7N60C3DS

HGT1S7N60C3DS ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
23nC
Base Part Number:
HGT1S7N60
Detailed Description:
IGBT 600V 14A 60W Surface Mount TO-263AB
Reverse Recovery Time (trr):
37ns
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
14A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 7A
Supplier Device Package:
TO-263AB
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
165µJ (on), 600µJ (off)
Power - Max:
60W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test Condition:
480V, 7A, 50Ohm, 15V
Current - Collector Pulsed (Icm):
56A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S7N60C3DS. Features 23nc gate charge. Base Part Number: hgt1s7n60. It features igbt 600v 14a 60w surface mount to-263ab. It has a trr (reverse recovery time) of 37ns. The product is available in surface mount configuration. The maximum collector current includes 14a. Features 2v @ 15v, 7a. to-263ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 165µj (on), 600µj (off). The maximum power of the product is 60w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Test condition included 480v, 7a, 50ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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HGTP7N60C3D, HGT1S7N60C3D/S(Datasheets)

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