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ON Semiconductor HGT1S7N60A4DS

HGT1S7N60A4DS ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
37nC
Base Part Number:
HGT1S7N60
Detailed Description:
IGBT 600V 34A 125W Surface Mount TO-263AB
Reverse Recovery Time (trr):
34ns
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
34A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 7A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-263AB
Packaging:
Tube
Switching Energy:
55µJ (on), 60µJ (off)
Td (on/off) @ 25°C:
11ns/100ns
Power - Max:
125W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 7A, 25Ohm, 15V
Current - Collector Pulsed (Icm):
56A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S7N60A4DS. Features 37nc gate charge. Base Part Number: hgt1s7n60. It features igbt 600v 34a 125w surface mount to-263ab. It has a trr (reverse recovery time) of 34ns. The product is available in surface mount configuration. The maximum collector current includes 34a. Features 2.7v @ 15v, 7a. The product has -55°c ~ 150°c (tj) operating temperature range. to-263ab is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 55µj (on), 60µj (off). Td (on/off) value of 11ns/100ns. The maximum power of the product is 125w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 7a, 25ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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HGT(G,P)7N60A4D, HGT1S7N60A4DS(Datasheets)

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