Deliver to
United Kingdom
This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S3N60A4DS9A. Features 21nc gate charge. Base Part Number: hgt1s3n60. It features igbt 600v 17a 70w surface mount to-263ab. It has a trr (reverse recovery time) of 29ns. The product is available in surface mount configuration. The maximum collector current includes 17a. Features 2.7v @ 15v, 3a. The product has -55°c ~ 150°c (tj) operating temperature range. to-263ab is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 37µj (on), 25µj (off). Td (on/off) value of 6ns/73ns. The maximum power of the product is 70w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 3a, 50ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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