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This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S2N120CN. Features 30nc gate charge. Base Part Number: hgt1s2n120. It features igbt npt 1200v 13a 104w through hole to-262. The product is available in through hole configuration. The maximum collector current includes 13a. Features 2.4v @ 15v, 2.6a. The product has -55°c ~ 150°c (tj) operating temperature range. to-262 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 96µj (on), 355µj (off). Td (on/off) value of 25ns/205ns. The maximum power of the product is 104w. It carries standard input type. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT npt type. Test condition included 960v, 2.6a, 51ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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