ON Semiconductor HGT1S20N60A4S9A

HGT1S20N60A4S9A ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
142nC
Base Part Number:
HGT1S20
Detailed Description:
IGBT 600V 70A 290W Surface Mount TO-263AB
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
70A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 20A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-263AB
Packaging:
Tube
Switching Energy:
105µJ (on), 150µJ (off)
Td (on/off) @ 25°C:
15ns/73ns
Power - Max:
290W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 20A, 3Ohm, 15V
Current - Collector Pulsed (Icm):
280A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S20N60A4S9A. Features 142nc gate charge. Base Part Number: hgt1s20. It features igbt 600v 70a 290w surface mount to-263ab. The product is available in surface mount configuration. The maximum collector current includes 70a. Features 2.7v @ 15v, 20a. The product has -55°c ~ 150°c (tj) operating temperature range. to-263ab is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 105µj (on), 150µj (off). Td (on/off) value of 15ns/73ns. The maximum power of the product is 290w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 20a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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HGT1S20N60A4S9A(Datasheets)

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