ON Semiconductor HGT1S20N36G3VL

ON Semiconductor

Product Information

Gate Charge:
28.7nC
Base Part Number:
HGT1S20
Detailed Description:
IGBT 395V 37.7A 150W Through Hole I2PAK (TO-262)
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
37.7A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 5V, 20A
Operating Temperature:
-40°C ~ 175°C (TJ)
Supplier Device Package:
I2PAK (TO-262)
Packaging:
Tube
Td (on/off) @ 25°C:
-/15µs
Power - Max:
150W
Customer Reference:
Input Type:
Logic
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Voltage - Collector Emitter Breakdown (Max):
395V
Test Condition:
300V, 10A, 25Ohm, 5V
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S20N36G3VL. Features 28.7nc gate charge. Base Part Number: hgt1s20. It features igbt 395v 37.7a 150w through hole i2pak (to-262). The product is available in through hole configuration. The maximum collector current includes 37.7a. Features 1.9v @ 5v, 20a. The product has -40°c ~ 175°c (tj) operating temperature range. i2pak (to-262) is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of -/15µs. The maximum power of the product is 150w. It carries logic input type. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum collector emitter breakdown voltage of the product is 395v. Test condition included 300v, 10a, 25ohm, 5v. The on semiconductor's product offers user-desired applications.

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HGTP,HGT1S20N36G3VL(S)(Datasheets)

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