Dimensions:
10.67 x 11.33 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
298 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
35A
Detailed Description:
IGBT 1200V 35A 298W Surface Mount TO-263AB
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Td (on/off) @ 25°C:
23ns/165ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge:
100nC
Base Part Number:
HGT1S10
Voltage - Collector Emitter Breakdown (Max):
1200V
Switching Energy:
320µJ (on), 800µJ (off)
Test Condition:
960V, 10A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Current - Collector Pulsed (Icm):
80A
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Power - Max:
298W
Customer Reference:
