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ON Semiconductor HGT1S10N120BNS

HGT1S10N120BNS ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
100nC
Base Part Number:
HGT1S10
Detailed Description:
IGBT NPT 1200V 35A 298W Surface Mount D²PAK
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
35A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
D²PAK
Packaging:
Tube
Switching Energy:
320µJ (on), 800µJ (off)
Td (on/off) @ 25°C:
23ns/165ns
Power - Max:
298W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
NPT
Test Condition:
960V, 10A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
80A
Manufacturer:
ON Semiconductor
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S10N120BNS. Features 100nc gate charge. Base Part Number: hgt1s10. It features igbt npt 1200v 35a 298w surface mount d²pak. The product is available in surface mount configuration. The maximum collector current includes 35a. Features 2.7v @ 15v, 10a. The product has -55°c ~ 150°c (tj) operating temperature range. d²pak is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 320µj (on), 800µj (off). Td (on/off) value of 23ns/165ns. The maximum power of the product is 298w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT npt type. Test condition included 960v, 10a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly/Material Chgs 15/Mar/2018(PCN Assembly/Origin)
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HGT(G,P)10N120BN, HGT1S10N120BNS(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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Discover our top brands and the latest innovation in supplying electrical and electronic innovative ON Semiconductor HGT1S10N120BNS all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as ON Semiconductor HGT1S10N120BNS principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET14525152. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.

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