ON Semiconductor FGP5N60UFDTU

FGP5N60UFDTU ON Semiconductor
ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
10A
Detailed Description:
IGBT Field Stop 600V 10A 81W Through Hole TO-220-3
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 5A
Td (on/off) @ 25°C:
6ns/44ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3
Gate Charge:
19.5nC
Base Part Number:
FGP5
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
30ns
Switching Energy:
75µJ (on), 59µJ (off)
Test Condition:
400V, 5A, 20Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
15A
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
81W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FGP5N60UFDTU. The maximum collector current includes 10a. It features igbt field stop 600v 10a 81w through hole to-220-3. Features 2.4v @ 15v, 5a. Td (on/off) value of 6ns/44ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 19.5nc gate charge. Base Part Number: fgp5. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 30ns. Provide switching energy up to 75µj (on), 59µj (off). Test condition included 400v, 5a, 20ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 81w.

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Multiple Devices 27/Feb/2012(PCN Obsolescence/ EOL)
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FGP5N60UFD(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)

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