ON Semiconductor FGP40N6S2

FGP40N6S2 ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
35nC
Base Part Number:
FGP4
Detailed Description:
IGBT 600V 75A 290W Through Hole TO-220-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
75A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 20A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-220-3
Packaging:
Tube
Switching Energy:
115µJ (on), 195µJ (off)
Td (on/off) @ 25°C:
8ns/35ns
Power - Max:
290W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 20A, 3Ohm, 15V
Current - Collector Pulsed (Icm):
180A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGP40N6S2. Features 35nc gate charge. Base Part Number: fgp4. It features igbt 600v 75a 290w through hole to-220-3. The product is available in through hole configuration. The maximum collector current includes 75a. Features 2.7v @ 15v, 20a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 115µj (on), 195µj (off). Td (on/off) value of 8ns/35ns. The maximum power of the product is 290w. It carries standard input type. Moreover, the product comes in to-220-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 20a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FG(H/P/B)40N6S2(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)

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