ON Semiconductor FGP20N60UFDTU

FGP20N60UFDTU ON Semiconductor
FGP20N60UFDTU
FGP20N60UFDTU
ON Semiconductor

Product Information

Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
165 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-220
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Current - Collector (Ic) (Max):
40A
Detailed Description:
IGBT Field Stop 600V 40A 165W Through Hole TO-220-3
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 20A
Td (on/off) @ 25°C:
13ns/87ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3
Gate Charge:
63nC
Base Part Number:
FGP20N60
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
35ns
Switching Energy:
380µJ (on), 260µJ (off)
Test Condition:
400V, 20A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
60A
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
165W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGP20N60UFDTU. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. The product is available in through hole configuration. Provides up to 165 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 19 weeks of manufacturer standard lead time. The maximum collector current includes 40a. It features igbt field stop 600v 40a 165w through hole to-220-3. Features 2.4v @ 15v, 20a. Td (on/off) value of 13ns/87ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 63nc gate charge. Base Part Number: fgp20n60. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 35ns. Provide switching energy up to 380µj (on), 260µj (off). Test condition included 400v, 20a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 165w.

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FGP20N60UFD, 600V, 20A Field Stop IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Mold Chg 28/Oct/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FGP20N60UFD(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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