ON Semiconductor FGP10N60UNDF

FGP10N60UNDF ON Semiconductor
FGP10N60UNDF
FGP10N60UNDF
ET14520630
ET14520630
Transistors - IGBTs - Single
Transistors - IGBTs - Single
ON Semiconductor

Product Information

Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
139 W
Maximum Continuous Collector Current:
20 A
Maximum Collector Emitter Voltage:
600 V
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-220
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Current - Collector (Ic) (Max):
20A
Detailed Description:
IGBT NPT 600V 20A 139W Through Hole TO-220-3
Vce(on) (Max) @ Vge, Ic:
2.45V @ 15V, 10A
Td (on/off) @ 25°C:
8ns/52.2ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3
Gate Charge:
37nC
Base Part Number:
FGP1
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
37.7ns
Switching Energy:
150µJ (on), 50µJ (off)
Test Condition:
400V, 10A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
30A
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
139W
Customer Reference:
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FGP10N60UNDF. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. The product is available in through hole configuration. Provides up to 139 w maximum power dissipation. The product has a maximum 20 a continuous collector current . Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 16.51mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 15 weeks of manufacturer standard lead time. The maximum collector current includes 20a. It features igbt npt 600v 20a 139w through hole to-220-3. Features 2.45v @ 15v, 10a. Td (on/off) value of 8ns/52.2ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 37nc gate charge. Base Part Number: fgp1. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 37.7ns. Provide switching energy up to 150µj (on), 50µj (off). Test condition included 400v, 10a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 139w.

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FGP10N60UNDF, 600V, 10A Short Circuit Rated IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Mold Chg 28/Oct/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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TO220B03 Pkg Drawing(Datasheets)
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FGP10N60UNDF(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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