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ON Semiconductor FGL60N100DTU

FGL60N100DTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
230nC
Base Part Number:
FGL6
Detailed Description:
IGBT Trench 1000V 60A 176W Through Hole TO-264-3
Reverse Recovery Time (trr):
1.5µs
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 60A
Supplier Device Package:
TO-264-3
Voltage - Collector Emitter Breakdown (Max):
1000V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
176W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-264-3, TO-264AA
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
120A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGL60N100DTU. Features 230nc gate charge. Base Part Number: fgl6. It features igbt trench 1000v 60a 176w through hole to-264-3. It has a trr (reverse recovery time) of 1.5µs. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2.9v @ 15v, 60a. to-264-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1000v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 176w. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGL60N100D(Datasheets)

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