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ON Semiconductor FGL60N100BNTD

FGL60N100BNTD ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
275nC
Base Part Number:
FGL60N100
Detailed Description:
IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
Reverse Recovery Time (trr):
1.2µs
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 60A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-264-3
Packaging:
Tube
Td (on/off) @ 25°C:
140ns/630ns
Power - Max:
180W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-264-3, TO-264AA
Voltage - Collector Emitter Breakdown (Max):
1000V
IGBT Type:
NPT and Trench
Test Condition:
600V, 60A, 51Ohm, 15V
Current - Collector Pulsed (Icm):
120A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGL60N100BNTD. Features 275nc gate charge. Base Part Number: fgl60n100. It features igbt npt and trench 1000v 60a 180w through hole to-264-3. It has a trr (reverse recovery time) of 1.2µs. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2.9v @ 15v, 60a. The product has -55°c ~ 150°c (tj) operating temperature range. to-264-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of 140ns/630ns. The maximum power of the product is 180w. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. The maximum collector emitter breakdown voltage of the product is 1000v. Features an IGBT npt and trench type. Test condition included 600v, 60a, 51ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Assem/Material Chg 10/Oct/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)
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FGL60N100BNTD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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