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This is manufactured by ON Semiconductor. The manufacturer part number is FGL35N120FTDTU. The given dimensions of the product include 20.2 x 5.2 x 26.4mm. The product is available in through hole configuration. Provides up to 368 w maximum power dissipation. The product has a maximum 70 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). In addition, the height is 26.4mm. Furthermore, the product is 5.2mm wide. Its accurate length is 20.2mm. It offers a maximum ±25v gate emitter voltage . The package is a sort of to-264. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 70a. It features igbt trench field stop 1200v 70a 368w through hole to-264-3. Features 2.2v @ 15v, 35a. Td (on/off) value of 34ns/172ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features 210nc gate charge. Base Part Number: fgl35n120. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 337ns. Provide switching energy up to 2.5mj (on), 1.7mj (off). Test condition included 600v, 35a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-264-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 368w.
For more information please check the datasheets.
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