ON Semiconductor FGH80N60FDTU

FGH80N60FDTU ON Semiconductor
FGH80N60FDTU
FGH80N60FDTU
ON Semiconductor

Product Information

Dimensions:
15.6 x 4.7 x 20.6mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
290 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
25 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Field Stop 600V 80A 290W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 40A
Td (on/off) @ 25°C:
21ns/126ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
120nC
Base Part Number:
FGH80
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
36ns
Switching Energy:
1mJ (on), 520µJ (off)
Test Condition:
400V, 40A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
290W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH80N60FDTU. The given dimensions of the product include 15.6 x 4.7 x 20.6mm. The product is available in through hole configuration. Provides up to 290 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 25 weeks of manufacturer standard lead time. The maximum collector current includes 80a. It features igbt field stop 600v 80a 290w through hole to-247-3. Features 2.4v @ 15v, 40a. Td (on/off) value of 21ns/126ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 120nc gate charge. Base Part Number: fgh80. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 36ns. Provide switching energy up to 1mj (on), 520µj (off). Test condition included 400v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 290w.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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FGH80N60FD(Datasheets)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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