Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
333 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
P
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247 G03
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
3813pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
50µJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
31 Weeks
Current - Collector (Ic) (Max):
120A
Detailed Description:
IGBT Trench Field Stop 650V 120A 333W Through Hole TO-247 Long Leads
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 60A
Td (on/off) @ 25°C:
20.8ns/102ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
79nC
Base Part Number:
FGH60
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
34.6ns
Switching Energy:
227µJ (on), 100µJ (off)
Test Condition:
400V, 15A, 4.7Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
240A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 Long Leads
Packaging:
Tube
Power - Max:
333W
Customer Reference: