ON Semiconductor FGH60T65SQD-F155

ON Semiconductor

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
333 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
P
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247 G03
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
3813pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
50µJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
31 Weeks
Current - Collector (Ic) (Max):
120A
Detailed Description:
IGBT Trench Field Stop 650V 120A 333W Through Hole TO-247 Long Leads
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 60A
Td (on/off) @ 25°C:
20.8ns/102ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
79nC
Base Part Number:
FGH60
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
34.6ns
Switching Energy:
227µJ (on), 100µJ (off)
Test Condition:
400V, 15A, 4.7Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
240A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 Long Leads
Packaging:
Tube
Power - Max:
333W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH60T65SQD-F155. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 333 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247 g03. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 3813pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 50µj energy rating . The product offers single transistor configuration. It has typical 31 weeks of manufacturer standard lead time. The maximum collector current includes 120a. It features igbt trench field stop 650v 120a 333w through hole to-247 long leads. Features 2.1v @ 15v, 60a. Td (on/off) value of 20.8ns/102ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 79nc gate charge. Base Part Number: fgh60. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 34.6ns. Provide switching energy up to 227µj (on), 100µj (off). Test condition included 400v, 15a, 4.7ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 long leads is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 333w.

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Datasheet(Technical Reference)
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Datasheet FGH60T65SQD-F155(Technical Reference)
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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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FGH60T65SQD-F155(Datasheets)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)

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