ON Semiconductor FGH60N6S2

FGH60N6S2 ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
140nC
Base Part Number:
FGH60
Detailed Description:
IGBT 600V 75A 625W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
75A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 40A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
400µJ (on), 310µJ (off)
Td (on/off) @ 25°C:
18ns/70ns
Power - Max:
625W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 40A, 3Ohm, 15V
Current - Collector Pulsed (Icm):
320A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH60N6S2. Features 140nc gate charge. Base Part Number: fgh60. It features igbt 600v 75a 625w through hole to-247-3. The product is available in through hole configuration. The maximum collector current includes 75a. Features 2.5v @ 15v, 40a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 400µj (on), 310µj (off). Td (on/off) value of 18ns/70ns. The maximum power of the product is 625w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 40a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGH60N6S2(Datasheets)

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