ON Semiconductor FGH60N60SFDTU

FGH60N60SFDTU ON Semiconductor
FGH60N60SFDTU
FGH60N60SFDTU
ON Semiconductor

Product Information

Dimensions:
15.6 x 4.7 x 20.6mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
378 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
120 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
120A
Detailed Description:
IGBT Field Stop 600V 120A 378W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 60A
Td (on/off) @ 25°C:
22ns/134ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
198nC
Base Part Number:
FGH60
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
47ns
Switching Energy:
1.79mJ (on), 670µJ (off)
Test Condition:
400V, 60A, 5Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
180A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
378W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH60N60SFDTU. The given dimensions of the product include 15.6 x 4.7 x 20.6mm. The product is available in through hole configuration. Provides up to 378 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 120 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 120a. It features igbt field stop 600v 120a 378w through hole to-247-3. Features 2.9v @ 15v, 60a. Td (on/off) value of 22ns/134ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 198nc gate charge. Base Part Number: fgh60. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 47ns. Provide switching energy up to 1.79mj (on), 670µj (off). Test condition included 400v, 60a, 5ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 378w.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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