Deliver to
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH50T65UPD. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 340 w maximum power dissipation. The product has a maximum 100 a continuous collector current . Whereas features a 650 v of collector emitter voltage (max). In addition, the height is 20.82mm. Furthermore, the product is 4.82mm wide. Its accurate length is 15.87mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 100a. It features igbt trench field stop 650v 100a 340w through hole to-247-3. Features 2.3v @ 15v, 50a. Td (on/off) value of 32ns/160ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 230nc gate charge. Base Part Number: fgh50. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 53ns. Provide switching energy up to 2.7mj (on), 740µj (off). Test condition included 400v, 50a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 340w.
For more information please check the datasheets.
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