ON Semiconductor FGH50N3

FGH50N3 ON Semiconductor
FGH50N3
FGH50N3
ET14520592
ET14520592
Transistors - IGBTs - Single
ON Semiconductor

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
463 W
Maximum Continuous Collector Current:
75 A
Maximum Collector Emitter Voltage:
300 V
Height:
20.82mm
Width:
4.82mm
Length:
15.87mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
47 Weeks
Current - Collector (Ic) (Max):
75A
Detailed Description:
IGBT PT 300V 75A 463W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
1.4V @ 15V, 30A
Td (on/off) @ 25°C:
20ns/135ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
180nC
Base Part Number:
FGH50
Voltage - Collector Emitter Breakdown (Max):
300V
Switching Energy:
130µJ (on), 92µJ (off)
Test Condition:
180V, 30A, 5Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
PT
Current - Collector Pulsed (Icm):
240A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
463W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH50N3. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 463 w maximum power dissipation. The product has a maximum 75 a continuous collector current . Whereas features a 300 v of collector emitter voltage (max). In addition, the height is 20.82mm. Furthermore, the product is 4.82mm wide. Its accurate length is 15.87mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 47 weeks of manufacturer standard lead time. The maximum collector current includes 75a. It features igbt pt 300v 75a 463w through hole to-247. Features 1.4v @ 15v, 30a. Td (on/off) value of 20ns/135ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 180nc gate charge. Base Part Number: fgh50. The maximum collector emitter breakdown voltage of the product is 300v. Provide switching energy up to 130µj (on), 92µj (off). Test condition included 180v, 30a, 5ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT pt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 463w.

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FGH50N3, 300V SMPS IGBT (Insulated Gate Bipolar Transistor)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FGH50N3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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