ON Semiconductor FGH40T65UPD

FGH40T65UPD ON Semiconductor
FGH40T65UPD
ON Semiconductor

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
268 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 650V 80A 268W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 40A
Td (on/off) @ 25°C:
20ns/144ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
177nC
Base Part Number:
FGH40
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
43ns
Switching Energy:
1.59mJ (on), 580µJ (off)
Test Condition:
400V, 40A, 7Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
268W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH40T65UPD. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 268 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80a. It features igbt trench field stop 650v 80a 268w through hole to-247-3. Features 2.3v @ 15v, 40a. Td (on/off) value of 20ns/144ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 177nc gate charge. Base Part Number: fgh40. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 43ns. Provide switching energy up to 1.59mj (on), 580µj (off). Test condition included 400v, 40a, 7ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 268w.

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FGH40T65UPD, 650V 40A Field Stop Trench IGBT Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Fab Change 08/Oct/2020(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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FGH40T65UPD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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