ON Semiconductor FGH40T120SMD

FGH40T120SMD ON Semiconductor
FGH40T120SMD
FGH40T120SMD
ON Semiconductor

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
555 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
47 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 1200V 80A 555W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 40A
Td (on/off) @ 25°C:
40ns/475ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
370nC
Base Part Number:
FGH40
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
65ns
Switching Energy:
2.7mJ (on), 1.1mJ (off)
Test Condition:
600V, 40A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
555W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH40T120SMD. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 555 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 47 weeks of manufacturer standard lead time. The maximum collector current includes 80a. It features igbt trench field stop 1200v 80a 555w through hole to-247-3. Features 2.4v @ 15v, 40a. Td (on/off) value of 40ns/475ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 370nc gate charge. Base Part Number: fgh40. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 65ns. Provide switching energy up to 2.7mj (on), 1.1mj (off). Test condition included 600v, 40a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 555w.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Fab Change 08/Oct/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FGH40T120SMD(F155)(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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