ON Semiconductor FGH30N120FTDTU

FGH30N120FTDTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
208nC
Base Part Number:
FGH30
Detailed Description:
IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-247-3
Reverse Recovery Time (trr):
730ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Supplier Device Package:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
339W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
90A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH30N120FTDTU. Features 208nc gate charge. Base Part Number: fgh30. It features igbt trench field stop 1200v 60a 339w through hole to-247-3. It has a trr (reverse recovery time) of 730ns. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2v @ 15v, 30a. to-247-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 339w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGH30N120FTD(Datasheets)

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