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This is manufactured by ON Semiconductor. The manufacturer part number is FGH30N120FTDTU. Features 208nc gate charge. Base Part Number: fgh30. It features igbt trench field stop 1200v 60a 339w through hole to-247-3. It has a trr (reverse recovery time) of 730ns. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2v @ 15v, 30a. to-247-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 339w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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