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ON Semiconductor FGH20N6S2D

FGH20N6S2D ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
30nC
Base Part Number:
FGH20
Detailed Description:
IGBT 600V 28A 125W Through Hole TO-247-3
Reverse Recovery Time (trr):
31ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
28A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 7A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
25µJ (on), 58µJ (off)
Td (on/off) @ 25°C:
7.7ns/87ns
Power - Max:
125W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 7A, 25Ohm, 15V
Current - Collector Pulsed (Icm):
40A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH20N6S2D. Features 30nc gate charge. Base Part Number: fgh20. It features igbt 600v 28a 125w through hole to-247-3. It has a trr (reverse recovery time) of 31ns. The product is available in through hole configuration. The maximum collector current includes 28a. Features 2.7v @ 15v, 7a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 25µj (on), 58µj (off). Td (on/off) value of 7.7ns/87ns. The maximum power of the product is 125w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 7a, 25ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FG(H,P,B)20N6S2D(Datasheets)

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