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ON Semiconductor FGD3N60LSDTM-T

FGD3N60LSDTM-T ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
12.5nC
Base Part Number:
FGD3
Detailed Description:
IGBT 600V 6A 40W Surface Mount TO-252, (D-Pak)
Reverse Recovery Time (trr):
234ns
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
6A
Vce(on) (Max) @ Vge, Ic:
1.5V @ 10V, 3A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Bulk
Switching Energy:
250µJ (on), 1mJ (off)
Td (on/off) @ 25°C:
40ns/600ns
Power - Max:
40W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
480V, 3A, 470Ohm, 10V
Current - Collector Pulsed (Icm):
25A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGD3N60LSDTM-T. Features 12.5nc gate charge. Base Part Number: fgd3. It features igbt 600v 6a 40w surface mount to-252, (d-pak). It has a trr (reverse recovery time) of 234ns. The product is available in surface mount configuration. The maximum collector current includes 6a. Features 1.5v @ 10v, 3a. The product has -55°c ~ 150°c (tj) operating temperature range. to-252, (d-pak) is the supplier device package value. In addition, bulk is the available packaging type of the product. Provide switching energy up to 250µj (on), 1mj (off). Td (on/off) value of 40ns/600ns. The maximum power of the product is 40w. It carries standard input type. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 480v, 3a, 470ohm, 10v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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1Q2018 Product EOL 31/Mar/2018(PCN Obsolescence/ EOL)
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FGD3N60LSD(Datasheets)

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