ON Semiconductor FGB7N60UNDF

FGB7N60UNDF ON Semiconductor
FGB7N60UNDF
FGB7N60UNDF
ON Semiconductor

Product Information

Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
14 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
14A
Detailed Description:
IGBT NPT 600V 14A 83W Surface Mount TO-263AB (D²PAK)
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 7A
Td (on/off) @ 25°C:
5.9ns/32.3ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge:
18nC
Base Part Number:
FGB7N60
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
32.3ns
Switching Energy:
99µJ (on), 104µJ (off)
Test Condition:
400V, 7A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
21A
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB (D²PAK)
Packaging:
Tube
Power - Max:
83W
Customer Reference:
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FGB7N60UNDF. The given dimensions of the product include 10.67 x 9.65 x 4.83mm. The product is available in surface mount configuration. Provides up to 83 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 14 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 14a. It features igbt npt 600v 14a 83w surface mount to-263ab (d²pak). Features 2.3v @ 15v, 7a. Td (on/off) value of 5.9ns/32.3ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features 18nc gate charge. Base Part Number: fgb7n60. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 32.3ns. Provide switching energy up to 99µj (on), 104µj (off). Test condition included 400v, 7a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-263ab (d²pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 83w.

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FGB7N60UNDF, 600V, 7A Short Circuit Rated IGBT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Size Update 29/Sep/2014(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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FGB7N60UNDF(Datasheets)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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