ON Semiconductor FGB40N6S2T

FGB40N6S2T ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
35nC
Base Part Number:
FGB4
Detailed Description:
IGBT 600V 75A 290W Surface Mount TO-263AB
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
75A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 20A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Switching Energy:
115µJ (on), 195µJ (off)
Td (on/off) @ 25°C:
8ns/35ns
Power - Max:
290W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 20A, 3Ohm, 15V
Current - Collector Pulsed (Icm):
180A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGB40N6S2T. Features 35nc gate charge. Base Part Number: fgb4. It features igbt 600v 75a 290w surface mount to-263ab. The product is available in surface mount configuration. The maximum collector current includes 75a. Features 2.7v @ 15v, 20a. The product has -55°c ~ 150°c (tj) operating temperature range. to-263ab is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. Provide switching energy up to 115µj (on), 195µj (off). Td (on/off) value of 8ns/35ns. The maximum power of the product is 290w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 20a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FG(H/P/B)40N6S2(Datasheets)

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