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This is manufactured by ON Semiconductor. The manufacturer part number is FGAF40N60UFTU. The given dimensions of the product include 15.5 x 5.5 x 26.5mm. The product is available in through hole configuration. Provides up to 100 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pf. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 77nc gate charge. Base Part Number: fgaf4. It features igbt 600v 40a 100w through hole to-3pf. The maximum collector current includes 40a. Features 3v @ 15v, 20a. The product has -55°c ~ 150°c (tj) operating temperature range. It has typical 44 weeks of manufacturer standard lead time. to-3pf is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 470µj (on), 130µj (off). Td (on/off) value of 15ns/65ns. The maximum power of the product is 100w. It carries standard input type. Moreover, the product comes in to-3p-3 full pack. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 20a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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