Dimensions:
15.7 x 3.2 x 26.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
115 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PF
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
41 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Field Stop 600V 80A 115W Through Hole TO-3PF
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 40A
Td (on/off) @ 25°C:
12ns/92ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3 Full Pack
Gate Charge:
119nC
Base Part Number:
FGAF4
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
36ns
Switching Energy:
870µJ (on), 260µJ (off)
Test Condition:
400V, 40A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PF
Packaging:
Tube
Power - Max:
115W
Customer Reference:
