ON Semiconductor FGA70N33BTDTU

FGA70N33BTDTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
49nC
Base Part Number:
FGA70
Detailed Description:
IGBT Trench 330V 149W Through Hole TO-3P
Reverse Recovery Time (trr):
23ns
Mounting Type:
Through Hole
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 70A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
330V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
149W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
220A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGA70N33BTDTU. Features 49nc gate charge. Base Part Number: fga70. It features igbt trench 330v 149w through hole to-3p. It has a trr (reverse recovery time) of 23ns. The product is available in through hole configuration. Features 1.7v @ 15v, 70a. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 330v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 149w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGA70N33BTD(Datasheets)

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