ON Semiconductor FGA70N30TDTU

FGA70N30TDTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
125nC
Base Part Number:
FGA70
Detailed Description:
IGBT Trench 300V 201W Through Hole TO-3PN
Reverse Recovery Time (trr):
21ns
Mounting Type:
Through Hole
Vce(on) (Max) @ Vge, Ic:
1.5V @ 15V, 20A
Supplier Device Package:
TO-3PN
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
201W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
160A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGA70N30TDTU. Features 125nc gate charge. Base Part Number: fga70. It features igbt trench 300v 201w through hole to-3pn. It has a trr (reverse recovery time) of 21ns. The product is available in through hole configuration. Features 1.5v @ 15v, 20a. to-3pn is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 201w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGA70N30TD(Datasheets)

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