Deliver to
United Kingdom
This is manufactured by ON Semiconductor. The manufacturer part number is FGA50N100BNTD2. Features 257nc gate charge. Base Part Number: fga50n100. It features igbt npt and trench 1000v 50a 156w through hole to-3p. It has a trr (reverse recovery time) of 75ns. The product is available in through hole configuration. The maximum collector current includes 50a. Features 2.9v @ 15v, 60a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of 34ns/243ns. The maximum power of the product is 156w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 1000v. Features an IGBT npt and trench type. Test condition included 600v, 60a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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