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This is manufactured by ON Semiconductor. The manufacturer part number is FGA30T65SHD. It has typical 44 weeks of manufacturer standard lead time. The maximum collector current includes 60a. It features igbt trench field stop 650v 60a 238w through hole to-3pn. Features 2.1v @ 15v, 30a. Td (on/off) value of 14.4ns/52.8ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 54.7nc gate charge. Base Part Number: fga30t65. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 31.8ns. Provide switching energy up to 598µj (on), 167µj (off). Test condition included 400v, 30a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 238w.
For more information please check the datasheets.
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