ON Semiconductor FGA25N120ANTU

FGA25N120ANTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
200nC
Base Part Number:
FGA25
Detailed Description:
IGBT NPT 1200V 40A 310W Through Hole TO-3P
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
40A
Vce(on) (Max) @ Vge, Ic:
3.2V @ 15V, 25A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-3P
Packaging:
Tube
Switching Energy:
4.8mJ (on), 1mJ (off)
Td (on/off) @ 25°C:
60ns/170ns
Power - Max:
310W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
NPT
Test Condition:
600V, 25A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
75A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGA25N120ANTU. Features 200nc gate charge. Base Part Number: fga25. It features igbt npt 1200v 40a 310w through hole to-3p. The product is available in through hole configuration. The maximum collector current includes 40a. Features 3.2v @ 15v, 25a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 4.8mj (on), 1mj (off). Td (on/off) value of 60ns/170ns. The maximum power of the product is 310w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT npt type. Test condition included 600v, 25a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGA25N120AN(Datasheets)

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