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This is manufactured by ON Semiconductor. The manufacturer part number is FGA25N120ANTDTU-F109. It has typical 52 weeks of manufacturer standard lead time. The maximum collector current includes 50a. It features igbt npt and trench 1200v 50a 312w through hole to-3p. Features 2.65v @ 15v, 50a. Td (on/off) value of 50ns/190ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 200nc gate charge. Base Part Number: fga25n120. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 350ns. Provide switching energy up to 4.1mj (on), 960µj (off). Test condition included 600v, 25a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt and trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 312w.
For more information please check the datasheets.
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