Dimensions:
15.8 x 5 x 18.9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
312 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3P
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Current - Collector (Ic) (Max):
50A
Detailed Description:
IGBT NPT and Trench 1200V 50A 312W Through Hole TO-3P
Vce(on) (Max) @ Vge, Ic:
2.65V @ 15V, 50A
Td (on/off) @ 25°C:
50ns/190ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
200nC
Base Part Number:
FGA25N120
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
350ns
Switching Energy:
4.1mJ (on), 960µJ (off)
Test Condition:
600V, 25A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
NPT and Trench
Current - Collector Pulsed (Icm):
90A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3P
Packaging:
Tube
Power - Max:
312W
Customer Reference:
