ON Semiconductor FGA15N120ANTDTU

FGA15N120ANTDTU ON Semiconductor
ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
30A
Detailed Description:
IGBT NPT and Trench 1200V 30A 186W Through Hole TO-3P
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 15A
Td (on/off) @ 25°C:
15ns/160ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
120nC
Base Part Number:
FGA15
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
330ns
Switching Energy:
3mJ (on), 600µJ (off)
Test Condition:
600V, 15A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
NPT and Trench
Current - Collector Pulsed (Icm):
45A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3P
Packaging:
Tube
Power - Max:
186W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FGA15N120ANTDTU. The maximum collector current includes 30a. It features igbt npt and trench 1200v 30a 186w through hole to-3p. Features 2.4v @ 15v, 15a. Td (on/off) value of 15ns/160ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 120nc gate charge. Base Part Number: fga15. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 330ns. Provide switching energy up to 3mj (on), 600µj (off). Test condition included 600v, 15a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt and trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 186w.

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FGA15N120ANTD(Datasheets)

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