ON Semiconductor FGA120N30DTU

FGA120N30DTU ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
120nC
Base Part Number:
FGA12
Detailed Description:
IGBT 300V 120A 290W Through Hole TO-3P
Reverse Recovery Time (trr):
21ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
120A
Vce(on) (Max) @ Vge, Ic:
1.4V @ 15V, 25A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
290W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Current - Collector Pulsed (Icm):
300A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGA120N30DTU. Features 120nc gate charge. Base Part Number: fga12. It features igbt 300v 120a 290w through hole to-3p. It has a trr (reverse recovery time) of 21ns. The product is available in through hole configuration. The maximum collector current includes 120a. Features 1.4v @ 15v, 25a. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 290w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGA120N30D(Datasheets)

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