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This is manufactured by Global Power Technologies Group. The manufacturer part number is GPA020A120MN-FD. Features 210nc gate charge. Td (on/off) value of 30ns/150ns. It features igbt trench field stop 1200v 40a 223w through hole to-3pn. It has a trr (reverse recovery time) of 425ns. The product is available in through hole configuration. The maximum collector current includes 40a. Features 2.5v @ 15v, 20a. to-3pn is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 2.8mj (on), 480µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 223w. It carries standard input type. Moreover, the product comes in to-3. Features an IGBT trench field stop type. Test condition included 600v, 20a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The global power technologies group's product offers user-desired applications.
For more information please check the datasheets.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Global Power Technologies Group GPA020A120MN-FD all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Global Power Technologies Group GPA020A120MN-FD principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET13633437. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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